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SQP25N15-52

Vishay
Part Number SQP25N15-52
Manufacturer Vishay
Description Automotive N-Channel MOSFET
Published Jan 29, 2016
Detailed Description www.vishay.com SQP25N15-52 Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RD...
Datasheet PDF File SQP25N15-52 PDF File

SQP25N15-52
SQP25N15-52

Overview
www.
vishay.
com SQP25N15-52 Vishay Siliconix Automotive N-Channel 150 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package TO-220AB 150 0.
052 25 Single TO-220 FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified d • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b TC = 25 °C TC = 125 °C ID IS IDM Single Pulse Avalanche Energy Single Pulse Avalanche Current L = 0.
1 mH IAS EAS Maximum Power Dissipation b TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 150 ± 20 25 16 50 65 30 45 107 35 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a.
Package limited.
b.
Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c.
When mounted on 1" square PCB (FR4 material).
d.
Parametric verification ongoing.
PCB Mount c SYMBOL RthJA RthJC LIMIT 50 1.
4 UNIT V A mJ W °C UNIT °C/W S15-2048-Rev.
A, 31-Aug-15 1 Document Number: 66974 For technical questions, contact: automostechsupport@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com SQP25N15-52 Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic b VDS VGS(th) IGSS IDSS ID(on) RDS(on) g...


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