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1SV281

Toshiba Semiconductor
Part Number 1SV281
Manufacturer Toshiba Semiconductor
Description VARIABLE CAACITANCE DIODE
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 1SV281 VCO for V/UHF Band Radio • High capaci...
Datasheet PDF File 1SV281 PDF File

1SV281
1SV281

Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 1SV281 VCO for V/UHF Band Radio • High capacitance ratio: C1 V/C4 V = 2.
0 (typ.
) • Low series resistance: rs = 0.
28 Ω (typ.
) • Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure r...


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