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1SV282

Toshiba Semiconductor
Part Number 1SV282
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV282 1SV282 CATV Tuning • High capacitance ratio: ...
Datasheet PDF File 1SV282 PDF File

1SV282
1SV282

Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV282 1SV282 CATV Tuning • High capacitance ratio: C2 V/C25 V = 12.
5 (typ.
) • Low series resistance: rs = 0.
6 Ω (typ.
) • Excellent C-V characteristics, and small tracking error.
• Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Peak reverse voltage Junction temperature Storage temperature range VR VRM Tj Tstg 34 36 (RL = 10 kΩ) 125 −55~125 V V °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods...


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