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1SV291

Toshiba Semiconductor
Part Number 1SV291
Manufacturer Toshiba Semiconductor
Description Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV291 UHF SHF Tuning · High capacitance ratio: C2 V/C...
Datasheet PDF File 1SV291 PDF File

1SV291
1SV291

Overview
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV291 UHF SHF Tuning · High capacitance ratio: C2 V/C25 V = 7.
6 (typ.
) · Low series resistance: rs = 1.
9 Ω (typ.
) · Excellent C-V characteristics, and small tracking error.
· Useful for small size tuner.
Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Peak reverse voltage Junction temperature Storage temperature range Symbol VR VRM Tj Tstg Rating 30 35 (RL = 10 kW) 125 -55~125 Unit V V °C °C 1SV291 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance VR IR C2 V C25 V C2 V/C25 V r...


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