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IRFP1405PBF

International Rectifier
Part Number IRFP1405PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Jan 30, 2016
Detailed Description PD - 95509A IRFP1405PbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature...
Datasheet PDF File IRFP1405PBF PDF File

IRFP1405PBF
IRFP1405PBF

Overview
PD - 95509A IRFP1405PbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
G HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 5.
3mΩ S ID = 95A S GD TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor VGS Gate-t...


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