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IRFP250MPBF

International Rectifier
Part Number IRFP250MPBF
Manufacturer International Rectifier
Description Power MOSFET
Published Jan 30, 2016
Detailed Description PD - 96292 l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully ...
Datasheet PDF File IRFP250MPBF PDF File

IRFP250MPBF
IRFP250MPBF

Overview
PD - 96292 l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free IRFP250MPbF HEXFET® Power MOSFET D VDSS = 200V RDS(on) = 0.
075Ω G ID = 30A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 2...


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