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IRFR24N15DPbF

International Rectifier
Part Number IRFR24N15DPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Jan 30, 2016
Detailed Description Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Ch...
Datasheet PDF File IRFR24N15DPbF PDF File

IRFR24N15DPbF
IRFR24N15DPbF

Overview
Applications l High frequency DC-DC converters Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free PD - 95370B IRFR24N15DPbF IRFU24N15DPbF VDSS 150V HEXFET® Power MOSFET RDS(on) max 95mΩ ID 24A D-Pak I-Pak IRFR24N15DPbF IRFU24N15DPbF Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance RθJC RθJA RθJA Parameter Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Max.
24 17 96 140 0.
92 ± 30 4.
9 -55 to + 175 300 (1.
6mm from case ) Units A W W/°C V V/ns °C Typ.
––– ––– ––– Max.
1.
1 50 110 Units °C/W Notes  through …,* are on page 10 www.
irf.
com 1 09/22/10 IRFR/U24N15DPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 150 ––– ––– 3.
0 ––– ––– ––– ––– ––– 0.
18 82 ––– ––– ––– ––– ––– ––– ––– 95 5.
0 25 250 100 -100 V V/°C mΩ V µA nA VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA † VGS = 10V, ID = 14A „ VDS = VGS, ID = 250µA VDS = 150V, VGS = 0V VDS = 120V, VGS = 0V, TJ = 150°C VGS = 30V VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Forward Transconductance Total Gate Charge Gate-to-S...


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