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BLP10H610

NXP
Part Number BLP10H610
Manufacturer NXP
Description Broadband LDMOS driver transistor
Published Jan 31, 2016
Detailed Description BLP10H610 Broadband LDMOS driver transistor Rev. 3 — 25 September 2014 Product data sheet 1. Product profile 1.1 Gene...
Datasheet PDF File BLP10H610 PDF File

BLP10H610
BLP10H610

Overview
BLP10H610 Broadband LDMOS driver transistor Rev.
3 — 25 September 2014 Product data sheet 1.
Product profile 1.
1 General description A 10 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.
Table 1.
Application performance Test signal f (MHz) CW 27 40 60 80 88 to 108 400 to 450 950 to 1225 Pulsed RF [1] 860 1190 to 1410 DVB-T 860 [1] tp= 100 s;  = 10 %.
VDS PL Gp (V) (W) (dB) 50 10 26.
7 50 20 25 50 19 24 50 19 25 50 16 25 50 >14 >25.
5 50 >13 >16 50 10 22 45 11 >14 50 1 >21 D (%) 46 65 65 67 62 >62 >42 60 - 1.
2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 1400 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications  Industrial, scientific and medical applications  Broadcast transmitter applications NXP Semiconductors BLP10H610 Broadband LDMOS driver transistor 2.
Pinning information Table 2.
Pinning Pin Description 1, 6, 7, 12 n.
c.
2, 3 gate1 4, 5 gate2 8, 9 drain2 10, 11 drain1 13 source Simplified outline          [1]    7UDQVSDUHQWWRSYLHZ [1] Connected to flange.
3.
Ordering information Graphic symbol      DDD Table 3.
Ordering information Type number Package Name Description Version BLP10H610 HVSON12 plastic thermal enhanced very thin small outline SOT1352-1 package; no leads; 12 terminals; body 5  6  0.
85 mm 4.
Limiting values Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS drain-source voltage VGS gate-source voltage Tstg storage temperature Tj junction temperature Min Max Unit - 104 V 6 +11 V 65 +150 C - 150 C BLP10H610 Product data sheet All information provided in this document is subject to legal discl...


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