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1T362

Sony Corporation
Part Number 1T362
Manufacturer Sony Corporation
Description Silicon Variable Capacitance Diode
Published Mar 23, 2005
Detailed Description 1T362 Silicon Variable Capacitance Diode Description The 1T362 is a variable capacitance diode designed for electronic t...
Datasheet PDF File 1T362 PDF File

1T362
1T362

Overview
1T362 Silicon Variable Capacitance Diode Description The 1T362 is a variable capacitance diode designed for electronic tuning of TV tuners, and the super miniature package allows the tuner miniaturization.
Features • Super miniature package • Low series resistance 0.
65 Ω Max.
(f=470 MHz) • Large capacitance ratio 6.
5 Typ.
(C2/C25) • Small leakage current 10 nA Max.
(VR=28 V) • Maximum capacitance deviation 3% Max.
Applications Electronic tuning for TV and CATV Structure Silicon epitaxial planar type diode M-235 Absolute Maximum Ratings (Ta=25 °C) • Reverse voltage VR 30 V • Peak reverse voltage VRM 35 V (RL≥10 kΩ) • Operating temperature Topr 85 °C • Storage temperature Tstg –55 to +150 °C Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Series resistance Maximum-capacitance deviation in the same ranking Symbol IR C2 C25 C2/C25 rs ∆C Conditions VR=28 V VR=2 V, f=1 MHz VR=25 V, f=1 MHz f=1 MHz CD=14 pF, f=470 MHz VR=2 to 25 V, f=1 MHz Min.
14.
01 2.
10 Typ.
15.
00 2.
27 6.
5 0.
57 Max.
10 16.
33 2.
39 0.
65 3 (Ta=25 °C) Unit nA pF pF Ω % Sony reserves the right to change products and specifications without prior notice.
This information does not convey any license by any implication or otherwise under any patents or other right.
Application circuits shown, if any, are typical examples illustrating the operation of the devices.
Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1— E89144B83-TE 1T362 Diode capacitance vs.
Reverse voltage Ta=25°C f=1MHz 20 CD-Diode capacitance (pF) 10 5 2 1 1 2 5 10 20 VR-Reverse voltage (V) Reverse voltage vs.
Ambient temperature IR=10µA VR-Reverse voltage (V) 50 40 30 –20 0 20 40 60 80 Ta-Ambient temperature (°C) —2— 1T362 Diode capacitance vs.
Ambient temperature 1.
03 f=1MHz VR=1V Reverse current vs.
Ambient temperature 1000 VR=28V 1.
02 C (Ta) Diode capacitance C (25°C) VR=2V VR=10V IR-Reverse current (pA) 100 1.
01 VR=25V 1.
00 10 1 ...


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