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10NN15

Unisonic Technologies
Part Number 10NN15
Manufacturer Unisonic Technologies
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Feb 1, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 10NN15 DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 10NN15 is a Dua...
Datasheet PDF File 10NN15 PDF File

10NN15
10NN15

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 10NN15 DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 10NN15 is a Dual N-channel enhancement mode power MOSFET using UTC’s perfect technology to provide customers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
 FEATURES * High switching speed * Low Gate Charge * Simple Drive Requirement  SYMBOL Power MOSFET SOP-8  ORDERING INFORMATION Ordering Number 10NN15G-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source Pin Assignment 1 2 3 4 5, 6 7, 8 S1 G1 S2 G2 D2 D1 Packing Tape Reel  MARKING www.
unisonic.
com.
tw Copyright © 2014 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R502-565.
D 10NN15 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 150 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous (Note 3) Pulsed (Note 2) ID IDM 3 12 A A Power Dissipation PD 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Pulse width limited by Max.
junction temperature.
3.
Surface mounted on 1in2 copper pad of FR4 board, t≤10sec; 135°C/W when mounted on Min.
copper pad.
 THERMAL CHARACTERISTICS PARAMETER Junction to Ambient (Note 3) SYMBOL θJA RATINGS 62.
5 UNIT °C/W  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse BVDSS IDSS IGSS ID=250µA, VGS=0V VDS=150V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A DYNAMIC ...


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