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IPB240N04S4-R9

Infineon
Part Number IPB240N04S4-R9
Manufacturer Infineon
Description Power-Transistor
Published Feb 1, 2016
Detailed Description IPB240N04S4-R9 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C ...
Datasheet PDF File IPB240N04S4-R9 PDF File

IPB240N04S4-R9
IPB240N04S4-R9

Overview
IPB240N04S4-R9 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on) ID 40 V 0.
87 mW 240 A PG-TO263-7-3 Type IPB240N04S4-R9 Package PG-TO263-7-3 Marking 4N04R9 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) E AS I D=120 A Avalanche current, single pulse I AS - Gate source voltage V GS - Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Value 240 240 960 750 190 ±20 300 -55 .
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+175 55/175/56 Unit A mJ A V W °C Rev.
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1 page 1 2014-04-07 IPB240N04S4-R9 Parameter Symbol Conditions Thermal characterist...


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