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UF540

Unisonic Technologies
Part Number UF540
Manufacturer Unisonic Technologies
Description 100V N-CHANNEL POWER MOSFET
Published Feb 1, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UF540 27A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF540 is a N-channel enhance...
Datasheet PDF File UF540 PDF File

UF540
UF540

Overview
UNISONIC TECHNOLOGIES CO.
, LTD UF540 27A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF540 is a N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance and high switching speed.
 FEATURES * RDS(on) ≤ 36mΩ @ VGS=10V, ID=15A * High Switching Speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF540L-TA3-T UF540G-TA3-T UF540L-TF3-T UF540G-TF3-T UF540L-TN3-R UF540G-TN3-R UF540L-TQ2-T UF540G-TQ2-T UF540L-TQ2-R UF540G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-252 TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tape Reel Tube Tape Reel  MARKING www.
unisonic.
com.
tw Copyright © 2019 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R502-715.
F UF540 Power MOSFET  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (Note 2) VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous TC=25°C TC=100°C ID 27 A 17 A Pulsed IDM 108 A Power Dissipation (TC=25°C) TO-220 TO-263 TO-220F PD 125 W 40 W TO-252 55 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
TJ = +25~+150°C  THERMAL DATA PARAMETER Junction to Case TO-220 TO-263 TO-220F TO-252 SYMBOL θJC RATINGS 1.
0 3.
125 2.
27 UNIT °C/W °C/W °C/W  ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse BVDSS IDSS IGSS ID=250µA, VGS=0V VDS=100V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance VGS(TH)...


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