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UF50N20

UTC
Part Number UF50N20
Manufacturer UTC
Description N-CHANNEL POWER MOSFET
Published Mar 11, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD UF50N20 Preliminary 50A, 200V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF50N20 is...
Datasheet PDF File UF50N20 PDF File

UF50N20
UF50N20


Overview
UNISONIC TECHNOLOGIES CO.
, LTD UF50N20 Preliminary 50A, 200V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF50N20 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge.
The UTC UF50N20 is suitable for motor control, AC-DC or DC-DC converters and audio amplifiers, etc.
„ FEATURES * RDS(ON)<40mΩ @ VGS=10V,ID=50A * High Switching Speed * High Current Capacity * Low Gate Charge(typical 130nC) „ SYMBOL Power MOSFET „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF50N20L-T47-T UF50N20G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-247 Pin Assignment 123 GDS Packing Tube www.
unisonic.
com.
tw Copyright © 2012 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R502-818.
a UF50N20 Preliminary Power MOSFET „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0) Gate-Source Voltage VDSS 200 V VGSS ±20 V Drain Current Avalanche Current Continuous Pulsed (Note 1) ID IDM IAR 50 A 200 A 60 A Avalanche Energy EAS 600 mJ Power Dissipation Junction Temperature PD 125 W TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Pulse width limited by safe operating area „ THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.
5 1 UNIT °C/W °C/W „ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-State Resistance BVDSS IDSS IGSS ID=250µA, VGS=0V VDS=200V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V...


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