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WFW11N90

Wisdom technologies
Part Number WFW11N90
Manufacturer Wisdom technologies
Description N-Channel MOSFET
Published Feb 1, 2016
Detailed Description Wisdom Semiconductor WFW11N90 Features ■ RDS(on) (Max 1.1 Ω )@VGS=10V ■ Gate Charge (Typical 70nC) ■ Improved dv/dt Ca...
Datasheet PDF File WFW11N90 PDF File

WFW11N90
WFW11N90

Overview
Wisdom Semiconductor WFW11N90 Features ■ RDS(on) (Max 1.
1 Ω )@VGS=10V ■ Gate Charge (Typical 70nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies.
N-Channel MOSFET Symbol 1.
Gate{ TO-247 { 2.
Drain ● ◀▲ ● ● { 3.
Source G DS Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter...


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