DatasheetsPDF.com

WFF6N90

Wisdom technologies
Part Number WFF6N90
Manufacturer Wisdom technologies
Description N-Channel MOSFET
Published Feb 1, 2016
Detailed Description PROVISIONAL Wisdom Semiconductor WFF6N90 N-Channel MOSFET Features ■ RDS(on) (Max 2.4 Ω )@VGS=10V ■ Gate Charge (Typi...
Datasheet PDF File WFF6N90 PDF File

WFF6N90
WFF6N90

Overview
PROVISIONAL Wisdom Semiconductor WFF6N90 N-Channel MOSFET Features ■ RDS(on) (Max 2.
4 Ω )@VGS=10V ■ Gate Charge (Typical 33nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Symbol 1.
Gate{ { 2.
Drain ● ◀▲ ● ● { 3.
Source TO-220F 123 Absolute Maximum Ratings *( Drain current limited by junction temperature) Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)