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CHA2069-99F

Part Number	CHA2069-99F
Manufacturer	United Monolithic Semiconductors
Description	18-31GHz Low Noise Amplifier
Published	Feb 2, 2016
Detailed Description	CHA2069-99F 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self bia...
Datasheet	CHA2069-99F PDF File

Overview

CHA2069-99F 18-31GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier.
The circuit is manufactured with a standard pHEMT process: 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in chip form.
Main Features ■ Broad band performance 16-31GHz ■ 2.
5dB noise figure ■ 22dB gain,  1dB gain flatness ■ Low DC power consumption, 55mA ■ 20dBm 3rd order intercept point ■ Chip size : 2,170 x 1,270x 0.
1mm Gain & NF ( dB ) 24 22 20 18 16 14 12 10 8 6 4 2 0 14 16 18 20 22 24 26 28 30 32 34 Frequency ( GHz ) On wafer typical measurements.
Main...

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CHA2069-99F 18-31GHz Low Noise Amplifier - United Monolithic Semiconductors

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