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CHA2110-98F

Part Number	CHA2110-98F
Manufacturer	United Monolithic Semiconductors
Description	7-12GHz LNA
Published	Feb 2, 2016
Detailed Description	CHA2110-98F S21 (dB) NF (dB) 7-12GHz LNA GaAs Monolithic Microwave IC Description The CHA2110-98F is a monolithic two...
Datasheet	CHA2110-98F PDF File

Overview

CHA2110-98F S21 (dB) NF (dB) 7-12GHz LNA GaAs Monolithic Microwave IC Description The CHA2110-98F is a monolithic two-stages wide band low noise amplifier circuit.
It is self-biased.
It is designed for military, space and telecommunication systems.
VD1 VD2 The circuit is manufactured with a pHEMT process, 0.
25µm gate length, via holes through the substrate, and air bridges.
IN It is available in chip form.
OUT Main Features ■ Broadband performances: 7-12GHz ■ Linear gain: 19dB ■ Return Losses: 12dB ■ Noise Figure: 1.
2dB ■ Output power @ 1dBcomp: 11dBm ■ DC bias: Vd=4 Volt@Id=45mA ■ Chip size 1.
93x1.
3x0.
1mm 25 5.
0 24 4.
5 23 4.
0 22 3.
5 21 20 S21 3.
0 2.
5 19 2.
0 18 1.
5 17 NF 1.
0 16 0.
5 15 0.
0 7.
0 7.
5 8.
0 8.
5 9.
0 9.
5 10.
0 10.
5 11.
0 11.
5 12.
0 Frequency (GHz) Gain and NF versus frequency Main Electrical Characteristics Tamb.
= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB comp (f=10GHz) Min Typ Max Unit 7 12 GHz 19 dB 1.
2 dB 11 dBm Ref.
: DSCHA21102181 - 29 Jun 12 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.
A.
S.
Bat.
Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.
: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA2110-98F Electrical Characteristics Tamb.
= +25°C Symbol Parameter Min Freq Frequency range 7 Gain Linear Gain NF Noise Figure RL_in Input return losses RL_out Output return losses P1dB IP3 Output power at 1dB comp (f=10GHz) 3rd order interception point (f=10GHz) Vd Drain supply voltage (self biased) Id Drain supply current These values are representative of measurements on test fixture.
7-12GHz LNA Typ Max Unit 12 GHz 19 dB 1.
2 dB -12 dB -12 dB 11 dBm 21 dB 4V 45 mA Absolute Maximum Ratings (1) Tamb.
= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 5V V Id Drain bias current 70 mA Tj Junction temperature 175 °C Ta Operating temperature range -40 to +...

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CHA2110-98F 7-12GHz LNA - United Monolithic Semiconductors

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