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CHA3396-QDG

United Monolithic Semiconductors
Part Number CHA3396-QDG
Manufacturer United Monolithic Semiconductors
Description 27-33.5GHz Medium Power Amplifier
Published Feb 2, 2016
Detailed Description CHA3396-QDG 27-33.5GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA...
Datasheet PDF File CHA3396-QDG PDF File

CHA3396-QDG
CHA3396-QDG


Overview
CHA3396-QDG 27-33.
5GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3396-QDG is a 3 stage monolithic medium power amplifier, which produces 22dB gain for 19dBm output power.
It is designed for a wide range of applications, from military to commercial communication systems.
The circuit is manufactured with a pHEMT process, 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in RoHS compliant SMD package.
UMS AA3363689786A YYYYWWWWG Main Features ■ Broadband performances: 27-33.
5GHz ■ 19dBm Pout at 1dB compression ■ 22dB gain ■ 30dBm OTOI ■ DC bias: Vd= 4.
0V, Id= 155mA ■ 24L-QFN4x4 (QDG) ■ MSL1 Output power (dBm), PAE (%) Output Power & PAE versus Frequency 30 28 26 24 22 20 18 16 14 Psat P-1dB PAE sat 12 10 23 24 25 26 27 28 29 30 31 32 33 Frequency (GHz) 34 Main Electrical Characteristics Tamb.
= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain P-1dB Output Power @1dB comp.
OTOI 3rd order Intercept point Min Typ Max Unit 27.
0 33.
5 GHz 22 dB 19 dBm 30 dBm Ref.
: DSCHA3396-QDG5260 -17 Sep 15 1/16 Specifications subject to change without notice United Monolithic Semiconductors S.
A.
S.
Bât.
Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.
: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3396-QDG 27-33.
5GHz Medium Power Amplifier Electrical Characteristics Tamb.
= +25°C, Vd = +4.
0V Symbol Parameter Min Typ Max Unit Freq Frequency range 27 33.
5 GHz Gain ΔG Linear Gain Gain variation in temperature 22 0.
026 dB dB/°C GCTRL OTOI Gain control range 3rd order Intercept point 15 dB 30 dBm P-1dB Psat Output power @ 1dB compression Saturated Output Power 19 dBm 21 dBm RLin Input Return Loss 10 dB RLout Output Return Loss 13 dB NF Noise figure 4.
5 dB Id Quiescent Drain current 155 mA Vg Gate voltage -0.
35 V These values are representative of onbo...



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