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CHA3656-QAG

United Monolithic Semiconductors
Part Number CHA3656-QAG
Manufacturer United Monolithic Semiconductors
Description 5.8-17GHz Low Noise Amplifier
Published Feb 2, 2016
Detailed Description UMS 368687A YWWG CHA3656-QAG UMS A366878A YYWWG 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD lea...
Datasheet PDF File CHA3656-QAG PDF File

CHA3656-QAG
CHA3656-QAG


Overview
UMS 368687A YWWG CHA3656-QAG UMS A366878A YYWWG 5.
8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3656-QAG is a two-stage selfbiased wide band monolithic low noise amplifier.
It is designed for a wide range of applications, from military to commercial communication systems.
The circuit is manufactured with a pHEMT process, 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in RoHS compliant SMD package.
UMUMSSUMS A36A683786AA53666878A YYYWYWWWYYGWWG Gain & NF (dB) UMS A368687A YYWWG Main Features ■ Broadband performances: 5.
8- 17GHz ■ 1.
7dB noise figure ■ 24dBm 3rd order intercept point ■ 14dBm power at 1dB compression ■ 20dB gain ■ Low DC power consumption ■ 16L-QFN3X3 SMD package Gain & Noise figure (dB) 28 26 24 22 20 18 16 14 12 Gain NF 10 8 6 4 2 0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Main Electrical Characteristics Tamb.
= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure P1dB Output Power @1dB comp.
Min Typ Max Unit 5.
8 17.
0 GHz 18 20.
0 dB 1.
7 2 dB 13.
0 14.
0 dBm Ref.
: DSCHA3656-QAG3156 - 05 Jun 13 1/14 Specifications subject to change without notice United Monolithic Semiconductors S.
A.
S.
Bât.
Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.
: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA3656-QAG 5.
8-17GHz Low Noise Amplifier Electrical Characteristics Tamb.
= +25°C, Vd = +3.
0V, P1, N2 = GND (1) Symbol Freq Gain NF Parameter Frequency range Linear Gain Noise Figure Min Typ Max Unit 5.
8 17.
0 GHz 18 20.
0 dB 1.
7 2 dB RL in Input return loss 78 RL out Output return loss 9 10 IP3 3rd order intercept point (Pin DCL = -20 dBm) 24 dBm P1dB Output power at 1dB gain comp 13 14 dBm D1, D2 Drain bias voltage 3 4V Id Drain bias current 68 90 mA These values are representative of onboard measurement...



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