DatasheetsPDF.com

CHA4107-99F

United Monolithic Semiconductors
Part Number CHA4107-99F
Manufacturer United Monolithic Semiconductors
Description 4.5-6.5GHz Medium Power Amplifier
Published Feb 2, 2016
Detailed Description CHA4107-99F 4.5-6.5GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA4107-99F is a monolithic...
Datasheet PDF File CHA4107-99F PDF File

CHA4107-99F
CHA4107-99F

Overview
CHA4107-99F 4.
5-6.
5GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA4107-99F is a monolithic two stage power amplifier designed for C-Band applications.
The MPA provides typically 26dBm output power associated to 35% power added efficiency at 3dBcomp.
The circuit is manufactured with a pHEMT process, 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
IN Vg Vd1 Vd2 OUT Main Features ■ Frequency band: 4.
5-6.
5GHz ■ 26dBm @ 3dBcomp ■ 24.
5 dB Linear Gain ■ High PAE: 35% for +5dBm input power ■ DC bias: Vd=8V@Id=115mA ■ Chip size 2.
37x1.
5x0.
07mm Main Characteristics Vd = 8V, Id (Quiescent) = 115 mA, Drain Pulse width = 45µs, Duty cycle = 12% Symbol Parameter Min Typ Max Freq Frequency range 4.
5 6.
5 Gain Linear Gain 24.
5 NF Noise Figure 5 Pout Output Power @ 3dB comp.
26 Unit GHz dB dB dBm Ref.
: DSCHA41074188 - 07 Jul 14 1/10 Specifications subject to change withou...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)