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CHA5266-QDG

United Monolithic Semiconductors
Part Number CHA5266-QDG
Manufacturer United Monolithic Semiconductors
Description 10-16 GHz Medium Power Amplifier
Published Feb 2, 2016
Detailed Description CHA5266-QDG 10-16 GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5...
Datasheet PDF File CHA5266-QDG PDF File

CHA5266-QDG
CHA5266-QDG


Overview
CHA5266-QDG 10-16 GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5266-QDG is a three stage monolithic GaAs medium power amplifier.
It is designed for a wide range of applications, from professional to commercial communication systems.
The circuit is manufactured with a pHEMT process, 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in RoHS compliant SMD package.
UUMMSS AA3562686786A YYYYWWWWG Main Features ■ Broadband performances: 10-16GHz ■ 23dB Linear Gain ■ 25.
5dBm output power @ 1dB comp.
■ 35dBm output IP3 ■ DC bias: Vd=5.
0Volt@Id=320mA ■ 24L-QFN4x4 ■ MSL1 Gain & Return Losses (dB) 30 25 20 S21 15 10 S11 5 S22 0 -5 -10 -15 -20 -25 -30 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Freq (GHz) Main Electrical Characteristics Tamb.
= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OIP3 Output TOI Pout Output Power @1dB comp.
Min Typ Max Unit 10 16 GHz 23 dB 35 dBm 25.
5 dBm Ref.
: DSCHA5266-QDG3233 - 21 Aug 13 1/14 Specifications subject to change without notice United Monolithic Semiconductors S.
A.
S.
Bât.
Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.
: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5266-QDG 10-16 GHz Medium Power Amplifier Electrical Characteristics Tamb.
= +25°C, Vd = +5.
0V Symbol Parameter Min Typ Max Unit Freq Frequency range 10 16 GHz Gain Linear Gain 23 dB RL_in Input Return Loss 9 dB RL_out Output Return Loss 20 dB P1dB Output power @ 1dB compression 25.
5 dBm Psat Saturated output power 27 dBm OIP3 Output IP3 35 dBm NF Noise Figure 6 dB Idq Quiescent Drain current 320 mA Vg Gate Voltage -0.
35 V These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board".
Absolute Maximum Ratings (1) Tamb.
= +25°C Symbol Parameter Values Unit Vd Drain bias voltage 6.
5V V ...



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