DatasheetsPDF.com

CHA5350-99F

United Monolithic Semiconductors
Part Number CHA5350-99F
Manufacturer United Monolithic Semiconductors
Description 17-24GHz Medium Power Amplifier
Published Feb 2, 2016
Detailed Description CHA5350-99F 17-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5350-99F is a four stage m...
Datasheet PDF File CHA5350-99F PDF File

CHA5350-99F
CHA5350-99F


Overview
CHA5350-99F 17-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5350-99F is a four stage monolithic MPA that typically provides an output power of 26.
5dBm at 1dB gain compression associated to a high IP3 output of 34dBm.
It is designed for a wide range of applications, from professional to commercial communication systems.
The circuit is manufactured with a pHEMT process, 0.
15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
In Vd1 Vd2,3 Vd4 STG1 STG2 STG3 STG4 Vg Main Features ■ Broadband performances: 17-24GHz ■ Linear gain = 26dB ■ Pout = 26.
5dBm @ 1dB comp.
■ High OIP3 = 34dBm ■ DC bias: Vd=6Volt @ Id=300mA ■ Chip size 2.
38x1.
46x0.
07mm Pout +IP3 Out Main Electrical Characteristics Tamb.
= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain P-1dB OIP3 Output Power @1dB gain compression Output third order interception point Min Typ Max Unit 17 24 GHz 26 dB 26.
5 dBm 34 dBm Ref.
: DSCHA53503018 - 18 Jan 13 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.
A.
S.
Bât.
Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.
: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 CHA5350-99F 17-24GHz Medium Power Amplifier Electrical Characteristics Tamb.
= +25°C, Vd1,2,3,4 = +6V, Idq = 300mA Symbol Freq Gain Gain_T RLin RLout P-1dB Psat PAE_ P-1dB Id_ P-1dB Id_ Psat OIP3 Vd1,2,3,4 Id Vg Parameter Frequency range Linear Gain Linear gain variation versus temperature Input Return Loss Output Return Loss Output Power @1dB gain compression Saturated output power Power added efficiency @1dB gain comp.
Drain current @1dB gain compression Drain current @ saturation Output third order interception point on the frequency range 17-21 GHz Output third order interception point on the frequency range 21-24 GHz Drain supply voltage Drain quiescent current Gate supply voltage Min Typ ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)