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SPP9972

SYNC POWER
Part Number SPP9972
Manufacturer SYNC POWER
Description P-Channel MOSFET
Published Feb 2, 2016
Detailed Description SPP9972 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9972 is the P-Channel logic enhancement mode power field e...
Datasheet PDF File SPP9972 PDF File

SPP9972
SPP9972

Overview
SPP9972 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP9972 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
The SPP9972 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
APPLICATIONS  Power Management in Note book  Powered System  DC/DC Converter  Load Switch FEATURES  -60V/-18A,RDS(ON)=25mΩ@VGS=-10V  -60V/-12A,RDS(ON)=33mΩ@VGS=-4.
5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  TO-252-2L package design PIN CONFIGURATION TO-252-2L PART MARKING 2020/04/30 Ver.
2 Page 1 SPP9972 P-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 Symbol G D S Description Gate Drain Source ORDERING INFORMATION Part Number Package SPP9972T252RGB TO-252-2L ※ SPP9972T252RGB : Tape Reel ; Pb – Free ; Halogen - Free Part Marking SPP9972 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Case TA=25℃ TA=100℃ TC=25℃ Symbol VDSS VGSS ID IDM EAS PD TJ TSTG RθJC Typical -60 ±20 -35 -27 -70 162 52 -55/150 -55/150 2.
4 Unit V V A A mJ W ℃ ℃ ℃/W 2020/04/30 Ver.
2 Page 2 SPP9972 P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage V(BR)DSS VGS=0V,ID=-250uA VGS(th) VDS=VGS,ID=-250uA IGSS VDS=0V...


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