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BAS100ATB6

Part Number	BAS100ATB6
Manufacturer	Pan Jit International
Description	SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES
Published	Feb 3, 2016
Detailed Description	BAS100ATB6 SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES VOLTAGE 100 Volts FEATURES • Smallest 100V Dual,...
Datasheet	BAS100ATB6 PDF File

Overview

BAS100ATB6 SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES VOLTAGE 100 Volts FEATURES • Smallest 100V Dual, isolated Schottky diode currently available • Lead free in comply with EU RoHS 2011/65/EU directives • Green molding compound as per IEC61249 Std.
.
(Halogen Free) MECHANICAL DATA • Case: SOT-563, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Apporx.
Weight: 0.
0001 ounces, 0.
0026 grams • Marking: BW ABSOLUTE MAXIMUM RATINGS (TA=25OC unless otherwise noted) PARAMETER S YMB OL Maxi mum Recurrent Peak Reverse Voltage V RRM Maxi mum RMS Voltage V RMS Maxi mum D C Blocking Voltage VR Maxi mum Average Forward Rectifi ed C urrent IF (AV ) Maxi mum Forward Rectifi ed C urrent @ t=10s Peak Forward Surge C urrent : 8.
3ms si ngle half sine-wave superimposed on rated load (JEDEC method) Peak Forward Surge Current : 10ms single half sine-wave superimposed on rated load (JEDEC method) Typ i c a l J unc ti o n C a p a c i ta nc e ( V R= 4 V, f = 1 M Hz) IF (AV ) IFSM IFSM CJ Typ i c a l The rm a l Re s i s ta nc e , J unc ti o n to A mb i e nt ( No te 1 ) RJA Op e ra t i ng J unc ti o n Te mp e r a tur e a nd S to r a g e Te m p e ra t ure R a ng e TJ, TSTG NOTE : 1.
Mounted on an FR4 PCB, single-sided copper, mini pad.
February 27,2013-REV.
01 VALUE 100 70 100 0.
4 0.
5 5.
5 5 21 480 -55 to +150 UNITS V V V A A A A pF OC / W OC PAGE .
1 BAS100ATB6 ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) PARAMETER Breakdown Voltage Instantaneous Forward Voltage Reverse Current SYMBOL Test Condition VBR I R=200A I F=0.
4A I F=0.
5A VF I F=0.
4A I F=0.
5A VR=80 V IR VR=100 V TJ=25oC TJ=25oC TJ=25oC TJ=125oC TJ=125oC TJ=25oC TJ=25oC TJ=125oC MIN.
100 - - - TYP.
- 0.
76 0.
8 0.
63 0.
66 20 65 MAX.
- 0.
81 0.
85 - - 1 - UNITS V V V nA A IF, Forward Current (A) 0.
45 0.
4 0.
35 0.
3 0.
25 0.
2 0.
15 0.
1 0.
05 0 0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig.
1 Forward Current Derating Curve 1000 100 TJ = 150°C 10 TJ = 125°...

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BAS100ATB6 SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES - Pan Jit International

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