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AUIRF3805S-7P

International Rectifier
Part Number AUIRF3805S-7P
Manufacturer International Rectifier
Description Power MOSFET
Published Feb 4, 2016
Detailed Description AUTOMOTIVE GRADE PD - 96318 AUIRF3805S-7P Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Op...
Datasheet PDF File AUIRF3805S-7P PDF File

AUIRF3805S-7P
AUIRF3805S-7P

Overview
AUTOMOTIVE GRADE PD - 96318 AUIRF3805S-7P Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * AUIRF3805L-7P HEXFET® Power MOSFET D V(BR)DSS 55V G S S (Pin 2, 3, 5, 6, 7) G (Pin 1) RDS(on) typ.
2.
0mΩ imax.
2.
6mΩ ID 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
DD S G S SS S D2Pak 7 Pin AUIRF3805S-7P GD S GSSS S TO-263CA 7 Pin AUIRF3805L-7P S Absolute Maximum Ratings Gate Drain Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max.
Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V cID @ TC = 100°C ID @ TC = 25°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation 240 170 160 1000 300 A W VGS EAS EAS (tested) IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage jSingle Pulse Avalanche Energy (Thermally Limited) dSingle Pu...


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