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IRG4IBC30KDPBF

Part Number	IRG4IBC30KDPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Feb 4, 2016
Detailed Description	PD -95597A IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High switchi...
Datasheet	IRG4IBC30KDPBF PDF File

Overview

PD -95597A IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High switching speed optimized for up to 25kHz with low VCE(on) Short Circuit Rating 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-220 FULLPAK Lead-Free C G E n-channel Short Circuit Rated UltraFast IGBT VCES = 600V VCE(on) typ.
= 2.
21V @VGE = 15V, IC = 9.
2A Benefits Generation 4 IGBTs offer highest efficiencies available maximizing the power density of the system IGBT's optimized for specific application conditions HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise EMI Designed to exceed the power handling capability of equivalent industry-standard IGBT Absolute Maximum Ratings TO-220 FULLPAK VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VISOL VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time RMS Isolation Voltage, Terminal to Case, t = 1 min Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance RθJC RθCS RθJA Wt Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight www.
irf.
com Max.
600 17 9.
2 34 34 9.
2 34 10 2500 ± 20 45 18 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbfin (1.
1 Nm) Typ.
2.
0 (0.
07) Max.
2.
8 3.
7 65 Units V A µs V W °C Units °C/W g (oz) 1 06/11/...

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IRG4IBC30KDPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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