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IRG4IBC30UDPBF

Part Number	IRG4IBC30UDPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Feb 4, 2016
Detailed Description	PD- 95598A IRG4IBC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE ...
Datasheet	IRG4IBC30UDPBF PDF File

Overview

PD- 95598A IRG4IBC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features • 2.
5kV, 60s insulation voltage • 4.
8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM outline • Lead-Free C G E n-channel VCES = 600V VCE(on) typ.
= 1.
95V @VGE = 15V, IC = 12A Benefits • Simplified assembly • Highest efficiency and power density • HEXFREDTM antiparallel Diode minimizes switching losses and EMI Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM Visol VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
TO-220 FULLPAK Max.
600 17 8.
9 68 68 8.
5 92 2500 ± 20 45 18 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1 N•m) Units V A V W °C Thermal Resistance RθJC RθJC RθJA Wt www.
irf.
com Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight Typ.
––– ––– ––– 2.
0 (0.
07) Max.
2.
8 4.
1 65 ––– Units °C/W g (oz) 1 06/17/2010 IRG4IBC30UDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltageƒ ∆V(BR)CES/∆TJ Temperature Coeff.
of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage 600 ––– ––– ––– ––– VGE...

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IRG4IBC30UDPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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