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IRG4PH50S-EPBF

International Rectifier
Part Number IRG4PH50S-EPBF
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Feb 4, 2016
Detailed Description PD -96225 IRG4PH50S-EPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: Optimized for min...
Datasheet PDF File IRG4PH50S-EPBF PDF File

IRG4PH50S-EPBF
IRG4PH50S-EPBF

Overview
PD -96225 IRG4PH50S-EPbF INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C G E n-channel VCES =1200V VCE(on) typ.
= 1.
47V @VGE = 15V, IC = 33A Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Absolute Maximum Ratings Parameter VCES IC@ TC = 25°C IC@ TC = 100°C ICM ILM VGE EARV PD @ TC =25° PD @ TC =100° TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current cPulsed Collector Current dClamped Inductive Load Current Gate-to-Emitter Voltage eTransient Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
C GC E TO-247AD IRG4PH50S-EPbF Max.
1200 57 33 114 114 ± 20 ± 30 270 200 80 -55 to + 150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf·in (1.
1 N·m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Min.
— — — — Typ.
— 0.
24 — 6.
0(0.
21) Max.
0.
64 — 40 — Units °C/W g (oz) www.
irf.
com 1 02/09/09 IRG4PH50S-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Collector-to-Emitter Breakdown Voltage 1200 Emitter-to-Collector Breakdown Voltage „ 18 Temperature Coeff.
of Breakdown Voltage — — — — 1.
22 1.
47 — — — 1.
7 V V V/°C VGE = 0V, IC = 250µA VGE = 0V, IC = 1.
0 A VGE = 0V, IC = 2.
0 mA IC = 33A VGE = ...


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