DatasheetsPDF.com

IRG4PSH71UDPBF

Part Number	IRG4PSH71UDPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Feb 4, 2016
Detailed Description	PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT ...
Datasheet	IRG4PSH71UDPBF PDF File

Overview

PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching C VCES = 1200V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than G VCE(on) typ.
= 2.
52V prior generations • Industry-benchmark Super-247 package with higher power handling capability compared to E n-channel @VGE = 15V, IC = 50A same footprint TO-247 • Creepage distance increased to 5.
35mm • Lead-Free Benefits • Generation 4 IGBT's offer highest efficiencies available • Maximum power density, twice the power handling of the TO-247, less space than TO-264 • IGBTs optimized for specific application conditions • Cost and space saving in designs that require SUPER - 247 multiple, paralleled IGBTs • HEXFREDTM antiparallel Diode minimizes switching losses and EMI Absolute Maximum Ratings Parameter Max.
Units VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE IF @ Tc = 100°C IFM PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current ÃPulse Collector Current dClamped Inductive Load current Gate-to-Emitter Voltage Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range 1200 99 50 200 200 ±20 70 200 350 140 -55 to +150 V A V W °C Storage Temperature Range, for 10 sec.
300 (0.
063 in.
(1.
6mm) from case) Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface RθJA Junction-to-Ambient, typical socket mount Recommended Clip Force Wt Weight Min.
––– ––– ––– ––– 20 (2.
0) ––– Typ.
––– ––– 0.
24 ––– 6 (0.
21) Max.
0.
36 0.
36 ––– 38 ––– Units °C/W...

Similar Datasheet

IRG4PSH71UDPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)