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PHD13003C

NXP
Part Number PHD13003C
Manufacturer NXP
Description NPN power transistor
Published Feb 4, 2016
Detailed Description PHD13003C NPN power transistor with integrated diode Rev. 01 — 29 July 2010 Product data sheet 1. Product profile 1...
Datasheet PDF File PHD13003C PDF File

PHD13003C
PHD13003C

Overview
PHD13003C NPN power transistor with integrated diode Rev.
01 — 29 July 2010 Product data sheet 1.
Product profile 1.
1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package 1.
2 Features and benefits „ Fast switching „ High typical DC current gain „ High voltage capability „ Integrated anti-parallel E-C diode 1.
3 Applications „ Compact fluorescent lamps (CFL) „ Low power electronic lighting ballasts „ Off-line self-oscillating power supplies (SOPS) for battery charging 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions IC collector current DC Ptot total power Tlead ≤ 25 °C; see Figure 1 dissipation VCESM collector-emitter VBE = 0 V peak voltage Static characteristics hFE DC current gain IC = 0.
5 A; VCE = 2 V; Tj = 25 °C Min Typ Max Unit - - 1.
5 A - - 2.
1 W - - 700 V 8 17 25 NXP Semiconductors PHD13003C NPN power transistor with integrated diode 2.
Pinning information Table 2.
Pin 1 2 3 Pinning information Symbol Description B base C collector E emitter Simplified outline Graphic symbol C B 3.
Ordering information 321 SOT54 (TO-92) E sym131 Table 3.
Ordering information Type number Package Name PHD13003C TO-92 4.
Limiting values Description plastic single-ended leaded (through hole) package; 3 leads Version SOT54 Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VCESM VCBO collector-emitter peak voltage collector-base voltage VBE = 0 V IE = 0 A VCEO IC ICM IB IBM Ptot Tstg Tj VEBO collector-emitter voltage collector current peak collector current base current peak base current total power dissipation storage temperature junction temperature emitter-base voltage IB = 0 A DC DC Tlead ≤ 25 °C; see Figure 1 IC = 0 A; I(Emitter) = 10 mA Min Max Unit - 700 V - 700 V - 400 V - 1.
5 A - 3A - 0.
75 A - 1.
5 A...


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