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DMN5L06DMKQ

Diodes
Part Number DMN5L06DMKQ
Manufacturer Diodes
Description N-Channel MOSFET
Published Feb 4, 2016
Detailed Description NEW PRODUCT DMN5L06DMKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) ma...
Datasheet PDF File DMN5L06DMKQ PDF File

DMN5L06DMKQ
DMN5L06DMKQ

Overview
NEW PRODUCT DMN5L06DMKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) max 2.
0Ω @ VGS = 5V 2.
5Ω @ VGS = 2.
5V 3.
0Ω @ VGS = 1.
8V ID max TA = +25°C 305mA 280mA 265mA Features  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected up to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
“Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
 General Purpose Interfacing Switch  Power Management Functions Mechanical Data  Case: SOT-26  Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-...


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