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VFT10200C-E3

Vishay
Part Number VFT10200C-E3
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Feb 5, 2016
Detailed Description VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier ...
Datasheet PDF File VFT10200C-E3 PDF File

VFT10200C-E3
VFT10200C-E3

Overview
VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3 www.
vishay.
com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
58 V at IF = 2.
5 A TO-220AB TMBS ® ITO-220AB VT10200C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT10200C 123 PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 275 °C max.
10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1 VBT10200C PIN 1 K PIN 2 HEATSINK VIT10200C 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.
0 A TJ max.
Package 2 x 5.
0 A 200 V 80 A 0.
65 V 150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variations Common cathode MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VT10200C Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) per device per diode VRRM IF(AV) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode IFSM Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode Voltage rate of change (rated VR) Isolation voltage (I...


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