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VT10200C-M3

Vishay
Part Number VT10200C-M3
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Feb 5, 2016
Detailed Description www.vishay.com VT10200C-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at...
Datasheet PDF File VT10200C-M3 PDF File

VT10200C-M3
VT10200C-M3

Overview
www.
vishay.
com VT10200C-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
58 V at IF = 2.
5 A TMBS ® TO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 VT10200C 3 2 1 PIN 1 PIN 2 PIN 3 CASE PRIMARY CHARACTERISTICS Package TO-220AB IF(AV) VRRM IFSM VF at IF = 5.
0 A TJ max.
Diode variations 2 x 5.
0 A 200 V 80 A 0.
65 V 150 °C Common cathode TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.
MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) per device per diode VRRM IF(AV) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode IFSM Voltage rate of change (rated VR) Operating junction and storage temperature range dV/dt TJ, TSTG VT10200C 200 10.
0 5.
0 80 10 000 - 40 to + 150 UNIT V A A V/μs °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP.
Breakdown voltage Instantaneous forward voltage per diode IR = 1.
0 mA IF = 2.
5 A IF = 5.
0 A IF = 2.
5 A IF = 5.
0 A Reverse current per diode VR = 180 V VR = 200 V TA = 25 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C VBR VF (1) IR (2) 200 (minimum) 0.
81 1.
10 0.
58 0.
65 1.
7 1.
8 2.
5 Notes (...


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