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VT6045CBP

Vishay
Part Number VT6045CBP
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Feb 5, 2016
Detailed Description www.vishay.com VT6045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass P...
Datasheet PDF File VT6045CBP PDF File

VT6045CBP
VT6045CBP

Overview
www.
vishay.
com VT6045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.
33 V at IF = 10 A TMBS ® TO-220AB VT6045CBP 3 2 1 PIN 1 PIN 2 PIN 3 CASE FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • TJ 200 °C max.
in solar bypass mode application • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TOP max.
(AC mode) TJ max.
(DC forward current) Package 2 x 30 A 45 V 320 A 0.
47 V 150 °C 200 °C TO-220AB Diode variation Dual common cathode MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compli...


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