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IRLB3813PBF

International Rectifier
Part Number IRLB3813PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Feb 6, 2016
Detailed Description PD - 97407 IRLB3813PbF Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converter...
Datasheet PDF File IRLB3813PBF PDF File

IRLB3813PBF
IRLB3813PBF


Overview
PD - 97407 IRLB3813PbF Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET® Power MOSFET VDSS RDS(on) max Qg (typ.
) 30V 1.
95mΩ@VGS = 10V 57nC D Benefits l Very Low RDS(on) at 4.
5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free G Gate DS G TO-220AB D Drain S Source Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V cPulsed Drain Current gMaximum Power Dissipation gMaximum Power Dissipation Linear Derating Factor TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter gRθJC Junction-to-Case RθCS RθJA Case-to-Sink, Flat Greased Surface fJunction-to-Ambient Notes  through † are on page 9 www.
irf.
com Max.
30 ± 20 h260 h190 1050 230 120 1.
6 -55 to + 175 300 (1.
6mm from case) x x10lb in (1.
1N m) Units V A W W/°C °C Typ.
––– 0.
50 ––– Max.
0.
64 ––– 62 Units °C/W 1 07/03/09 IRLB3813PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient 30 ––– ––– ––– 1.
35 ––– ––– 11 1.
60 2.
00 1.
90 -7.
8 ––– ––– 1.
95 2.
60 2.
35 ––– V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1.
0mA emΩ VGS = 10V, ID = 60A eVGS = 4.
5V, ID = 48A V VDS = VGS, ID = 150µA mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.
0 µA VDS = 24V, VGS = 0V ––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Sourc...


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