DatasheetsPDF.com

7N60K-MTQ

Unisonic Technologies
Part Number 7N60K-MTQ
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Feb 7, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 7N60K-MTQ Preliminary 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K-M...
Datasheet PDF File 7N60K-MTQ PDF File

7N60K-MTQ
7N60K-MTQ


Overview
UNISONIC TECHNOLOGIES CO.
, LTD 7N60K-MTQ Preliminary 6.
2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
 FEATURES * RDS(ON) < 1.
4Ω @ VGS = 10V, ID = 3.
5A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N60KL-TA3-T 7N60KG-TA3-T 7N60KL-TF3-T 7N60KG-TF3-T 7N60KL-TF1-T 7N60KG-TF1-T 7N60KL-TF2-T 7N60KG-TF2-T 7N60KL-TN3-R 7N60KG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220F2 TO-252 Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel  MARKING www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R205-025.
f 7N60K-MTQ Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 7 A Continuous Drain Current Pulsed Drain Current (Note 2) ID 7 A IDM 24.
8 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 340 mJ 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.
8 ns TO-220 142 W Power Dissipation TO-220F/TO-220F1 TO-220F2 PD 48 W TO-252 59 W Junction Temperature Operating Temperature TJ TOPR +150 -55 ~ +150 °C °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating : Pulse width limited ...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)