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9N50K-MT

Unisonic Technologies
Part Number 9N50K-MT
Manufacturer Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Published Feb 7, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 9N50K-MT 9A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N50K-MT is an N-channel m...
Datasheet PDF File 9N50K-MT PDF File

9N50K-MT
9N50K-MT

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 9N50K-MT 9A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N50K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers planar stripe and DMOS technology.
This technology allows a minimum on-state resistance, superior switching performance.
It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 9N50K-MT is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.
 FEATURES * RDS(ON) < 0.
85Ω @ VGS = 10 V, ID = 4.
5 A * High Switching Speed * Improved dv/dt Capability * 100% Avalanche Tested  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 9N50KL-TA3-T 9N50KG-TA3-T 9N50KL-TF3-T 9N50KG-TF3-T 9N50KL-TF1-T 9N50KG-TF1-T 9N50KL-TF2-T 9N50KG-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220F2 Pin Assignment 123 GD S GD S GD S GD S Packing Tube Tube Tube Tube 9N50KL-TA3-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube (2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1, TF2: TO-220F2 (3) L: Lead Free, G: Halogen Free and Lead Free www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 7 QW-R205-016.
D 9N50K-MT  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 7 QW-R205-016.
D 9N50K-MT Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 500 V Gate-Source Voltage Drain Current Avalanche Energy Continuous (TC=25°C) Pulsed (Note 2) Single Pulsed (Note 3) VGSS ID IDM EAS ±30 9 (Note 5) 36 (Note 5) 360 V A A mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
5 V/ns TO-220 140 W Power Dissipation TO-220F/TO-220F1 TO-220F2 PD 47 W TO-220 1.
1 W/°C Derate above 25°C TO-220F/TO-220F1 TO-220F2 PD 0.
38 W/°C Junction Temperature TJ +15...


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