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IGC11T120T6L

Infineon
Part Number IGC11T120T6L
Manufacturer Infineon
Description IGBT
Published Feb 7, 2016
Detailed Description IGC11T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive t...
Datasheet PDF File IGC11T120T6L PDF File

IGC11T120T6L
IGC11T120T6L

Overview
IGC11T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules Applications: • low / medium power drives C G E Chip Type IGC11T120T6L VCE 1200V ICn 8A Die Size 3.
48 x 3.
19 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 3.
48 x 3.
19 1.
965 x 1.
716 0.
608 x 0.
608 mm 2 11.
1 / 5.
5 115 µm 150 mm 0...


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