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IGC13T120T6L

Infineon
Part Number IGC13T120T6L
Manufacturer Infineon
Description IGBT
Published Feb 7, 2016
Detailed Description IGC13T120T6L IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive t...
Datasheet PDF File IGC13T120T6L PDF File

IGC13T120T6L
IGC13T120T6L

Overview
IGC13T120T6L IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules Applications: • low / medium power drives C G E Chip Type IGC13T120T6L VCE ICn 1200V 10A Die Size 3.
54 x 3.
81 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 3.
54 x 3.
81 1.
497 x 2.
34 0.
608 x 1.
092 mm 2 13.
48 / 6.
93 115 µm 150 mm 90 grd 1109 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm ∅ 0.
65mm ; max 1.
2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by IN FINEON Technologies ...


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