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IGC142T120T6RH

Infineon
Part Number IGC142T120T6RH
Manufacturer Infineon
Description IGBT
Published Feb 7, 2016
Detailed Description IGC142T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCEsat • soft turn off • p...
Datasheet PDF File IGC142T120T6RH PDF File

IGC142T120T6RH
IGC142T120T6RH


Overview
IGC142T120T6RH IGBT4 High Power Chip FEATURES: • 1200V Trench + Field Stop technology • low VCEsat • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium / high power modules Applications: • medium / high power drives C G E Chip Type VCE ICn Die Size IGC142T120T6RH 1200V 150A 11.
31 x 12.
56 m m2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 11.
31 x 12.
56 11.
04 x 9.
80 1.
31 x 0.
81 m...



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