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IGC168T170S8RH

Infineon
Part Number IGC168T170S8RH
Manufacturer Infineon
Description IGBT
Published Feb 7, 2016
Detailed Description IGC168T170S8RH IGBT3 Power Chip Features:  1700V Trench + Field stop technology  low switching losses and saturation...
Datasheet PDF File IGC168T170S8RH PDF File

IGC168T170S8RH
IGC168T170S8RH

Overview
IGC168T170S8RH IGBT3 Power Chip Features:  1700V Trench + Field stop technology  low switching losses and saturation losses  soft turn off  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type VCE IC Die Size IGC168T170S8RH 1700V 150A 13.
38 x 12.
58 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal 13.
38 x 12.
58 11.
159 x 10.
353 1.
674 x 0.
899 mm2 168.
3 190 µm 200 mm 142 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and ...


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