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22NM60N

STMicroelectronics
Part Number 22NM60N
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Feb 7, 2016
Detailed Description STI22NM60N Datasheet N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFET in I²PAK package Features TAB ct(s) 1 ...
Datasheet PDF File 22NM60N PDF File

22NM60N
22NM60N

Overview
STI22NM60N Datasheet N-channel 600 V, 0.
20 Ω typ.
, 16 A MDmesh™ II Power MOSFET in I²PAK package Features TAB ct(s) 1 2 3 du I²PAK Pro D(2) solete G(1) - Ob S(3) t(s) AM01475v1_noZen_noTab Order code VDS @ Tjmax.
RDS(on)max.
ID STI22NM60N 650 V 0.
22 Ω 16 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficiency converters.
roduc Product status te P STI22NM60N le Product summary so Order code STI22NM60N ObMarking 22NM60N Package I2PAK Packing Tube DS12574 - Rev 1 - May 2018 For further information contact your local STMicroelectronics sales office.
www.
st.
com STI22NM60N Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 16 A ID Drain current (continuous) at TC = 100 °C ) IDM (1) Drain current (pulsed) t(s PTOT Total dissipation at TC = 25 °C uc dv/dt (2) Peak diode recovery voltage slope d Tj Operating junction temperature range ro Tstg Storage temperature range te P 1.
Pulse width limited by safe operating area.
le 2.
ISD ≤ 16 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Obso Symbol ) - Rthj-case t(s Rthj-amb Table 2.
Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-ambient Produc Symbol te IAR ObsoleEAS Table 3.
Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 10 64 125 15 -55 to 150 Value 1 ...


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