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NCE01H29TC

NCE Power Semiconductor
Part Number NCE01H29TC
Manufacturer NCE Power Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Published Feb 7, 2016
Detailed Description http://www.ncepower.com Pb Free Product NCE01H29TC NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H2...
Datasheet PDF File NCE01H29TC PDF File

NCE01H29TC
NCE01H29TC

Overview
http://www.
ncepower.
com Pb Free Product NCE01H29TC NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H29TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of other applications.
General Features ● VDSS =100V,ID =290A RDS(ON) < 3.
2mΩ @ VGS=10V （Typ：2.
7mΩ） ● Good stability and uniformity with high EAS ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Schematic diagram Application ● DC motor drive ● High efficiency synchronous rectification in SMPS ● Uninterruptible power supply ● High speed power switching ● Hard switched and high frequency circuits Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package NCE01H29TC NCE01H29TC TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation IDM PD Derating factor Single pulse avalanche energy (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt Operating Junction and Storage Temperature Range TJ,TSTG Limit 100 ±20 290 200 1120 460 3.
07 3500 10 -55 To 175 Unit V V A A A W W/℃ mJ V/ns ℃ Wuxi NCE Power Semiconductor Co.
, Ltd Page 1 v1.
0 http://www.
ncepower.
com Pb Free Product NCE01H29TC Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 1) RθJC 0.
33 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS=0V ID=250μA VDS=100V,VGS=0V VGS=±20V,VDS=0V 100 110 --- 1 ±200 V μA nA ...


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