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CEB5175

CET
Part Number CEB5175
Manufacturer CET
Description P-Channel MOSFET
Published Feb 9, 2016
Detailed Description CEP5175/CEB5175 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -55V, -50A, RDS(ON) = 23mΩ @...
Datasheet PDF File CEB5175 PDF File

CEB5175
CEB5175

Overview
CEP5175/CEB5175 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -55V, -50A, RDS(ON) = 23mΩ @VGS = 10V.
RDS(ON) = 28mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -55 VGS ±20 Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID -50 -32 Drain Current-Pulsed a IDM -200 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 96 0.
77 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA This is preliminary information on a new product in development now .
Details are s...


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