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CED08N6A

CET
Part Number CED08N6A
Manufacturer CET
Description N-Channel MOSFET
Published Feb 9, 2016
Detailed Description CED08N6A/CEU08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 600V, 6.2A, RDS(ON) = 1.25Ω...
Datasheet PDF File CED08N6A PDF File

CED08N6A
CED08N6A

Overview
CED08N6A/CEU08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 600V, 6.
2A, RDS(ON) = 1.
25Ω @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 600 VGS ±30 Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID 6.
2 4.
4 Drain Current-Pulsed a IDM 24.
8 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 107 0.
7 Single Pulsed Avalan...


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