DatasheetsPDF.com

MTE115P10KQ8

Cystech Electonics
Part Number MTE115P10KQ8
Manufacturer Cystech Electonics
Description P-Channel Enhancement Mode MOSFET
Published Feb 9, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 1/9 P-Channel Enhancem...
Datasheet PDF File MTE115P10KQ8 PDF File

MTE115P10KQ8
MTE115P10KQ8

Overview
CYStech Electronics Corp.
Spec.
No.
: C165Q8 Issued Date : 2015.
09.
24 Revised Date : Page No.
: 1/9 P-Channel Enhancement Mode Power MOSFET MTE115P10KQ8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • ESD protected gate • Pb-free and Halogen-free package BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-6V, ID=-2A -100V -3.
7A 97mΩ(typ) 113mΩ(typ) Equivalent Circuit MTE115P10KQ8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTE115P10KQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE115P10KQ8 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C165Q8 Issued Date : 2015.
09.
24 Revised Date : Page No.
: 2/9 Absolute Maximum Ratings (TC=25C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 C , VGS=-10V Continuous Drain Current @TA=70 C , VGS=-10V Pulsed Drain Current (Note 1) Single Pulse Avalanche Current Single Pulse Avalanche Energy @ L=5mH, IAS=-3.
7A, VDD=-25V Power Dissipation (Note 2) TA=25 C TA=70 C Operating Junction and Storage Temperature Range Symbol BVDSS VGS ID IDM IAS EAS PD Tj ; Tstg Note : 1.
Pulse width limited by maximum junction temperature.
2.
Surface mounted on 1 in²copper pad of FR-4 board, t≤10s.
Limits -100 ±20 -3.
7 -3.
0 -20 -3.
7 34 3.
1 2.
0 -55~+150 Unit V A mJ W C Thermal Resistance Ratings Thermal Resistance Symbol Maximum Junction-to-Case RJC 5 Junction-to-Ambient (Note) RJA 40 Note : When mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum copper pad.
Unit °C / W Electrical Characteristics (Tc=25C, unless otherwise noted) Symbol Min.
Typ.
Max.
Unit Test...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)