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MTN2604N6

Cystech Electonics
Part Number MTN2604N6
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode MOSFET
Published Feb 9, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C737N6 Issued Date : 2015.09.24 Revised Date : Page No. : 1/9 N-Channel Enhancem...
Datasheet PDF File MTN2604N6 PDF File

MTN2604N6
MTN2604N6

Overview
CYStech Electronics Corp.
Spec.
No.
: C737N6 Issued Date : 2015.
09.
24 Revised Date : Page No.
: 1/9 N-Channel Enhancement Mode Power MOSFET MTN2604N6 BVDSS ID @VGS=4.
5V, TA=25°C RDSON@VGS=10V, ID=7A RDSON@VGS=4.
5V, ID=5A 30V 7A 19mΩ(typ.
) 26mΩ(typ.
) Features • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package Equivalent Circuit MTN2604N6 Outline SOT-26 S D D G：Gate S：Source D：Drain Pin #1 G D D Ordering Information Device MTN2604N6-0-T1-G Package SOT-26 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTN2604N6 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C737N6 Issued Date : 2015.
09.
24 Revised Date : Page No.
: 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4.
5V, TA=25 °C (Note 1) Continuous Drain Current @VGS=4.
5V, TA=100 °C (Note 1) Pulsed Drain Current (Note 2, 3) Total Power Dissipation @ TA=25 °C Linear Derating Factor Operating Junction and Storage Temperature Range VDS VGS ID IDM PD Tj ; Tstg 30 ±20 7 4.
4 20 2 0.
016 -55~+150 Thermal Resistance, Junction-to-Ambient (Note 1) Rth,ja 62.
5 Note : 1.
Surface mounted on 1 in² copper pad of FR-4 board.
156℃/W when mounted on minimum copper pad.
2.
Pulse width limited by maximum junction temperature.
3.
Pulse Width ≤300μs, Duty Cycle≤2% Unit V A W W / °C °C °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min.
Typ.
Max.
Unit Test Conditions Static BVDSS 30 - - V VGS=0V, ID=250μA ΔBVDSS/ΔTj - 0.
02 - V/℃ Reference to 25℃, ID=250μA VGS(th) 1- 3 V VDS=VGS, ID=250μA IGSS - - ±100 nA VGS=±20V, VDS=0V IDSS - - 1 25 μA VDS=24V, VGS=0V, ...


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