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MTN5N50BJ3

Cystech Electonics
Part Number MTN5N50BJ3
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode MOSFET
Published Feb 9, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C142J3 Issued Date : 2015.11.09 Revised Date : Page No. : 1/11 N-Channel Enhance...
Datasheet PDF File MTN5N50BJ3 PDF File

MTN5N50BJ3
MTN5N50BJ3

Overview
CYStech Electronics Corp.
Spec.
No.
: C142J3 Issued Date : 2015.
11.
09 Revised Date : Page No.
: 1/11 N-Channel Enhancement Mode Power MOSFET MTN5N50BJ3 BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=2.
25A 500V 4.
5A 1.
1Ω Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package • Pb-free lead plating and halogen-free package Symbol MTN5N50BJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package MTN5N50BJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTN5N50BJ3 CYStek Product Specification CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Maximum Temperature for Soldering @ Lead at 0.
125 in(0.
318mm) from case for 10 seconds Total Power Dissipation (TA=25℃) (Note 4) Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Symbol VDS VGS ID IDM EAS IAS EAR TL PD Tj, Tstg Spec.
No.
: C142J3 Issued Date : 2015.
11.
09 Revised Date : Page No.
: 2/11 Limits 500 ±30 4.
5 2.
8 18 90 4.
5 4.
8 300 2 48 0.
38 -55~+150 Unit V A mJ A mJ °C W W W/°C °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 2.
6 Thermal Resistance, Junction-to-ambient, max (Note 4) Thermal Resistance, Junction-to-ambient, max Rth,j-a 50 °C/W 110 Note : 1.
Repetitive rating; pulse width limited by maximum junction temperature.
2.
IA...


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