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MTP2N60E

ON Semiconductor
Part Number MTP2N60E
Manufacturer ON Semiconductor
Description Power Field Effect Transistor
Published Feb 9, 2016
Detailed Description MTP2N60E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This...
Datasheet PDF File MTP2N60E PDF File

MTP2N60E
MTP2N60E

Overview
MTP2N60E Designer’s™ Data Sheet TMOS E−FET.
™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time.
In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
• Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature http://onsemi.
com TMOS POWER FET 2.
0 AMPERES, 600 VOLTS RDS(on) = 3.
8 W TO−220AB CASE 221A−06 Style 5 D ®G MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value S Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.
0 MΩ) Gate−to−Source Voltage — Continuous — Single Pulse (tp ≤ 50 μs) Drain Current — Continuous — Single Pulse (tp ≤ 10 μs) VDSS VDGR VGS ID IDM 600 Vdc 600 Vdc ± 20 Vdc ± 40 2.
0 Adc 9.
0 Total Power Dissipation Derate above 25°C PD 50 Watts 0.
4 W/°C Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy — Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, L = 95 mH, RG = 25 Ω, Peak IL = 2.
0 Adc) TJ, Tstg EAS −55 to 150 190 °C mJ Thermal Resistance — Junction to Case° — Junction to Ambient° RθJC RθJA 2.
5° 62.
5° °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C Designer’s Data for “Worst Case” Conditions — The Des...


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