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MTS9539G6

Part Number	MTS9539G6
Manufacturer	Cystech Electonics
Description	N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Feb 9, 2016
Detailed Description	CYStech Electronics Corp. Spec. No. : C094G6 Issued Date : 2015.10.27 Revised Date : Page No. : 1/13 N- AND P-CHANNEL ...
Datasheet	MTS9539G6 PDF File

Overview

CYStech Electronics Corp.
Spec.
No.
: C094G6 Issued Date : 2015.
10.
27 Revised Date : Page No.
: 1/13 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTS9539G6 Description The MTS9539G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features • Simple drive requirement • Low gate charge • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package • ESD diode protected gate (Tr 1, N-channel) Equivalent Circuit MTS9539G6 Outline TSOP-6 S2 G2 D1 G：Gate S：Source D：Drain Pin 1 D2 S1 G1 Ordering Information Device MTS9539G6-0-T1-G Package TSOP-6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name MTS9539G6 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C094G6 Issued Date : 2015.
10.
27 Revised Date : Page No.
: 2/13 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 1) Continuous Drain Current @TA=70 °C (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Symbol BVDSS VGS ID IDM PD Tj, Tstg Rth,ja Limits N-channel P-channel 60 -30 ±20 ±20 0.
6 -3.
7 0.
48 -3.
0 1.
8 -30 1.
14 0.
01 -55~+150 110 Unit V A W W / °C °C °C/W Note : 1.
Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad 2.
Pulse width limited by maximum junction temperatur...

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MTS9539G6 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET - Cystech Electonics

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